India's DRDO develops indigenous GaN technology for next-gen radars, electronic warfare; tiny 3.5×3 mm chip delivers up to 30W power

[indo17787]

The MoD report gives several rather important technical details together:

• Indigenous GaN MMIC technology has been demonstrated and implemented for applications up to X-band.
• A single indigenous GaN chip is only 3.5 × 3 mm and can deliver up to 30 W.
• DRDO has indigenously designed/fabricated S-band GaN HEMT power bars, power amplifiers, low-noise amplifiers and switch MMICs.
• SSPL has developed 4-inch SiC wafer growth/manufacturing processes.
• The broader technology base has demonstrated GaN HEMTs up to 150 W and MMICs up to 40 W, with applications extending to X-band.
• Indigenous GaN-on-SiC MMIC limited-production capability exists at GAETEC, Hyderabad.